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| IRF40N03 N-CHANNEL Power MOSFET ORDERING INFORMATION Part Number Package ....................IRF40N03..............................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . cIRF40N03 Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Breakdown Voltage Temperature Coefficient (Reference to 25 VDSS/ TJ IDSS ) ) IGSS IGSS ON Characteristics Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 20A) Forward Transconductance (VDS = 10 V, ID = 20A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge (IS = 40 A, VGS = 0 V) (IF = 40A, VGS = 0 V, di/dt = 100A/s) Integral pn-diode in MOSFET ISM VSD trr Qrr ........................ Symbol Min Typ Max Units VDSS 30 0.037 ...V V/ A 1 25 100 -100 nA nA , ID = 1mA) Drain-to-Source Leakage Current (VDS = 30 V, VGS = 0 V, TJ = 25 (VDS = 24 V, VGS = 0 V, TJ = 150 Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) VGS(th) (Note 4) (Note 4) Dynamic Characteristics (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDS = 24 V, ID = 20 A, VGS = 5 V) (Note 5) Ciss Coss Crss Qg Qgs Qgd Resistive Switching Characteristics (VDS = 15 V, ID = 20 A, VGS = 10 V, RG = 3.3 ) (Note 5) td(on) trise td(off) tfall IS RDS(on) 1.0 2.0 3.0 V m 14 gFS 26 ................800 380 ...............133 17 3 ..................10 7.2 60 22.5 10 17 S . pF pF pF nC nC nC ns ns ... ... ... .. ns .................. ns 40 170 1.3 A A V ns nC Source-Drain Diode Characteristics 55 110 Note 1: TJ = +25 to 150 Note 2: Repetitive rating; pulse width limited by maximum junction temperature. Note 3: ISD = 12.0A, di/dt 100A/s, VDD BVDSS, TJ = +150 Note 4: Pulse width 250s; duty cycle 2% Note 5: Essentially independent of operating temerpature. www.magic-matsu.com Page 2 IRF40N03 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 40 35 V G S =10,9,8,7,6,5V 40 25 C 30 ID, Drain C urrent (A) 30 25 20 15 10 5 V G S =4V ID, Drain C urrent (A) T j=125 C 20 10 -55 C 0 0 1 2 3 4 5 6 0 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 3600 F igure 2. Trans fer C haracteris tics 1.3 R DS (ON), Normalized Drain-S ource, On-R es is tance V G S =10V 1.2 T j=125 C 1.1 1.0 0.9 0.8 0.7 25 C -55 C 3000 C , C apacitance (pF ) 2400 1800 C is s 1200 600 0 0 5 10 15 20 25 30 C os s C rs s 6 0 10 20 30 40 V DS , Drain-to S ource Voltage (V ) ID, Drain C urrent(A) B V DS S , Normalized Drain-S ource B reakdown V oltage F igure 3. C apacitance V th, Normalized G ate-S ource T hres hold V oltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250uA 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 V DS =10V F igure 6. B reakdown V oltage V ariation with T emperature 40 gFS , T rans conductance (S ) 50 Is , S ource-drain current (A) 0 5 10 15 20 40 30 20 10 0 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) F igure 7. T rans conductance V ariation with Drain C urrent V S D, B ody Diode F orward V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent www.magic-matsu.com Page 3 IRF40N03 POWER MOSFET V G S , G ate to S ource V oltage (V ) 10 ID, Drain C urrent (A) 8 6 4 2 0 0 VDS =10V ID=40A 300 200 100 1m 10 RD S (O N) L im it 10 10 DC s ms 0m 1s s 6 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 5 10 15 20 25 30 35 40 1 10 30 60 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge V DD F igure 10. Maximum S afe O perating Area ton toff tr 90% V IN D VG S R GE N G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve www.magic-matsu.com Page 4 |
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